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Title: Effect of high-pressure water-vapor annealing on energy transfer in dye-impregnated porous silicon
Authors: A. Chouket
B. Gelloz
H. Koyama
H. Elhouichet
M. Oueslati
N. Koshida
Keywords: Porous silicon
Photoluminescence
Energy transfer
Passivation
Issue Date: Nov-2009
Abstract: We have studied the effect of high-pressure water-vapor annealing (HWA) on the excitation energy transfer from Si nanocrystals to dye molecules in porous Si layers. Efficient photoluminescence, originating from both RhB molecules and Si nanocrystals, was observed. The behavior of the polarization memory of the photoluminescence showed the presence of energy transfer from the surface-passivated Si nanocrystals to RhB molecules. The fact that HWA, which is an effective method to stabilize and enhance the emission from Si nanocrystals in porous Si, does not suppress the energy transfer is an important result since it makes possible the realization of stable Si/dye-nanocomposite functional devices.
URI: http://hdl.handle.net/10132/3395
ISSN: 00222313
Appears in Collections:a.1.2 学術雑誌掲載論文(著者版)

Please use this identifier to cite or link to this item: http://hdl.handle.net/10132/3395

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